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?2009 fairchild semiconductor corporation 1 www.fairchildsemi.com FP7G150US60 rev. a FP7G150US60 transfer molded type igbt module tm nov 2009 power-spm tm FP7G150US60 transfer molded type igbt module general description fairchild?s new igbt modules ( transfer molded type ) provide low conduction and switching lo sses as well as short circuit ruggedness. they are designed for applications such as motor control, uninterrupted power supplies (ups) and general inverters where short circuit ruggedness is a required feature. features ? short circuit rated 10us @tc=100 ? c, vge=15v ? high speed switching ? low saturation voltage : vce(sat) =2.3v @ic=150a ? high input impedance ? fast & soft anti-parallel fwd application ?welders ? ac & dc motor controls ? general purpose inverters ? robotics ? servo controls ?ups absolute maximum ratings symbol description rating units v ces collector-emitter voltage 600 v v ges gate-emitter voltage ? 20 v i c collector current @ t c = 25 ? c 150 a i cm (1) maximum pulsed collector current 300 a i f diode continuous forward current @ t c = 100 ? c 150 a i fm diode maximum forward current 300 a t sc short circuit withstand time @ t c = 100 ? c10us p d maximum power dissipation @ t c = 25 ? c 450 w t j operating junction temperature -40 to +125 ? c t stg storage temperature range -40 to +125 ? c v iso isolation voltage @ ac 1minute 2500 v mounting torque power terminals screw : m5 2.0 n.m mounting screw : m5 2.0 n.m internal circuit diagram 1 2 45 6 7 3 1 2 45 6 7 3 1 2 45 6 7 3 package code : epm7
2 www.fairchildsemi.com FP7G150US60 rev. a FP7G150US60 transfer molded type igbt module pin configuration an d pin description top view internal circuit diagram pin description pin number pin description 1 emitter of q1, igbt, collector of q2, igbt 2 emitter of q2, igbt 3 collector of q1, igbt 4 gate of q1, igbt 5 emitter of q1, igbt 6 gate of q2, igbt 7 emitter of q2, igbt 1 2 45 6 7 3 1 2 45 6 7 3 1 2 45 6 7 3
3 www.fairchildsemi.com FP7G150US60 rev. a FP7G150US60 transfer molded type igbt module electrical characteristics (t j = 25c, unless otherwise specified) symbol parameter conditions min typ max units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250 ? a 600 - - v ? bv ces / ? t j temperature coeff. of breakdown voltage v ge = 0v, i c = 1ma - 0.6 - v i ces collector cut-off current v ce = v ces , v ge = 0v - - 250 ua i ges gate-emitter leakage current v ge = v ges , v ce = 0v - - ? 100 na on characteristics v ge(th) g-e threshold voltage v ge = 0v, i c =150ma 5.0 6.0 8.5 v v ce(sat) collector to emitter saturation voltage i c = 150a , v ge = 15v -2.32.8 v dynamic characteristics c ies input capacitance v ce = 30v, v ge = 0v, f = 1mhz 11.2 nf c oes output capacitance 1.03 nf c res reverse capacitance 0.1 nf switching characteristics t d(on) turn-on delay time v cc = 300 v, i c = 150a, r g = 2.4 ? , v ge = 15v inductive load, t c = 25 ? c -45- ns t r rise time -35- ns t d(off) turn-off delay time - 135 - ns t f fall time -70- ns e on turn-on switching loss - 0.66 - mj e off turn-off switching loss - 2.7 - mj e ts total switching loss - 3.36 - mj t d(on) turn-on delay time v cc = 300 v, i c = 150a, r g = 2.4 ? , v ge = 15v inductive load, t c = 125 ? c -45- ns t r rise time -35- ns t d(off) turn-off delay time - 160 - ns t f fall time - 170 - ns e on turn-on switching loss - 1.5 - mj e off turn-off switching loss - 4.4 - mj e ts total switching loss - 5.9 - mj t sc short circuit withstand time v cc = 300 v, v ge = 15v @ t c = 100 ? c10- - us q g total gate charge v ce = 300 v, i c = 150a, v ge = 15v - 336 - nc q ge gate-emitter charge - 68 - nc q gc gate-collector charge - 178 - nc
4 www.fairchildsemi.com FP7G150US60 rev. a FP7G150US60 transfer molded type igbt module electrical characteristics of diode (t j = 25c, unless otherwise specified) thermal characteristics symbol parameter conditions min typ max units v fm diode forward voltage i f = 150a t c = 25 ? c -1.82.8 v t c = 100 ? c -1.7- t rr diode reverse recovery time i f = 150a di / dt = 300 a/us t c = 25 ? c - 115 165 ns t c = 100 ? c - 190 - i rr diode peak reverse recovery current t c = 25 ? c -2333 a t c = 100 ? c -45- q rr diode reverse recovery charge t c = 25 ? c - 1322 - nc t c = 100 ? c - 4307 - symbol parameter typ. max. units r ? jc junction-to-case (igbt part, per 1/2 module) - 0.22 ? c / w r ? jc junction-to-case (diode part, per 1/2 module) - 0.54 ? c / w r ? cs case-to-sink (conductive grease applied) 0.05 - ? c / w weight weight of module - 90 g
5 www.fairchildsemi.com FP7G150US60 rev. a FP7G150US60 transfer molded type igbt module typical performance characteristics 024 0 40 80 120 160 200 240 280 20v 12v 15v v ge = 10v common emitter t c = 25 o c i c , collector current[a] v ce , collector-emitter voltage[v] 0.3 1 10 0 50 100 150 200 250 300 common emitter v ge = 15v t c = 25 o c t c = 125 o c i c , c o ll ec t or c urren t [a] v ce , collector-emitter voltage[v] 0 50 100 150 0 1 2 3 4 5 300a 150a i c = 75a common emitter v ge = 15v v ce , collector-emitter voltage[v t c , case temperature[ o c] 0 20 40 60 80 100 120 0.1 1 10 100 1000 duty cycle : 50% t c = 100 o c power dissipation = 130w v cc = 300v load current : peak of square wave frequency [khz] load current [a] 048121620 0 4 8 12 16 20 common emitter t c = 125 o c 300a 150a i c = 75a v ce , collector-emitter voltage[v] v ge , gate-emitter voltage[v] 048121620 0 4 8 12 16 20 common emitter t c = 25 o c 300a 150a i c = 75a v ce , collector-emitter voltage[v] v ge , gate-emitter voltage[v] fig 1. typical output characteristics fig 3. saturation voltage vs. case temperature at variant current level fig 4. load current vs. frequency fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge fig 2. typical saturation voltage characteristics
6 www.fairchildsemi.com FP7G150US60 rev. a FP7G150US60 transfer molded type igbt module 0.5 1 10 30 0 4000 8000 12000 16000 20000 24000 crss coss ciss common emitter v ge = 0v, f = 1mhz t c = 25 o c capacitance[pf] v ce , collector-emitter voltage[v] 110100 10 100 1000 common emitter v cc = 300v, v ge = +/- 15v i c = 150a t c = 25 o c t c = 125 o c ton tr switching time [ns] r g , gate resistance[ ? ] 110 100 30 100 1000 3000 tf common emitter v cc = 300v, v ge = +/- 15v i c = 150a t c = 25 o c t c = 125 o c switching time[ns] r g , gate resistance[ ? ] toff 1 10 100 0.1 1 10 100 common emitter v cc = 300v, v ge = +/- 15v i c = 150a t c = 25 o c t c = 125 o c eon eoff switching loss[mj] r g , gate resistance[ ? ] 50 75 100 125 150 175 200 225 250 10 100 tr ton common emitter rg=2.4ohm v cc = 300v, v ge = +/- 15v i c = 150a t c = 25 o c t c = 125 o c switching time[ns] i c , collector current[a] 50 75 100 125 150 175 200 225 250 10 100 1000 tf common emitter rg=2. 4ohm v cc = 300v, v ge = +/- 15v i c = 150a t c = 25 o c t c = 125 o c toff switching time[ns] i c , collector current[a] fig 7.capacitance characteristic fi g 8. turn-on characteristics vs. gate resistance fig 9. turn-off characteristics vs. gate resistance fig 10. switching loss vs. gate resistance fig 11. turn-on characteristics vs. collector current fig 12. turn-off characteristics vs. collector current
7 www.fairchildsemi.com FP7G150US60 rev. a FP7G150US60 transfer molded type igbt module 60 80 100 120 140 160 180 200 220 0.1 1 10 eoff eon common emitter rg=2.4ohm v cc = 300v, v ge = +/- 15v i c = 150a t c = 25 o c t c = 125 o c switching loss[mj] i c , collector current[a] 0 100 200 300 400 0 3 6 9 12 15 200 v v cc = 100 v 300 v common emitter r l = 2 ? t c = 25 o c v ge , gate-emitter voltage[v] q g , gate charge[nc] 1 10 100 1000 1 10 100 safe operating area v ge = 20v, t c = 100 o c i c , collector current[a] v ce , collector-emitter voltage[v] 0.3 1 10 100 1000 0.01 0.1 1 10 100 1000 single nonrepetitive pulse t c = 25 o c curves must be derated linerarly with increase in temperature 50us 100us 1ms dc operation i c max. (continuous) i c max. (pulsed) i c , collector current [a] v ce , collector-emitter voltage[v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 t c = 25 o c igbt : diode : thermal response, zthjc[ o c/w] rectangular pulse duration[sec] 0 100 200 300 400 500 600 700 0.1 1 10 100 600 single nonrepetitive pulse t j = 125 o c v ge = 15v r g = 2.4 ? i c , collector current[a] v ce , collector-emitter voltage[v] fig 14. gate charge characteristics fig 13. switching loss vs. collector fig 15. fbsoa characteristics fig 16. turn-off soa characteristics fig 17. rbsoa characteristics fig 18. transient thermal impedance
8 www.fairchildsemi.com FP7G150US60 rev. a FP7G150US60 transfer molded type igbt module 0123 0 50 100 150 200 250 common cathode v ge = 0v t c = 25 o c t c = 125 o c i f , forward current[a] v f , forward voltage[v] 0 20 40 60 80 100 120 140 160 180 t rr common cathode di/dt = 300a/us t c = 25 o c t c = 100 o c i rr i rr , peak reverse recovery current[a] t rr , reverse recovery time[ns] i f , forward current[a] fig 20. reverse recovery characteristics fig 19. forward characteristics
9 www.fairchildsemi.com FP7G150US60 rev. a FP7G150US60 transfer molded type igbt module detailed package outline drawings 76 54 123 14.50 +0.50 -0.80 25.00 0.20 93.00 0.50 23.50 0.50 23.00 0.50 23.00 0.50 16.22 0.50 5.08 0.50 80.00 0.30 35.00 0.50 (14.00) (9.00) (14.00) (9.00) (14.00) (6.50) (10.00) (6.50) (10.00) 10.00 0.10 10.00 0.50 17.50 0.30 12.20 0.30 18.40 0.50 ( 5 ) ( 1 4 ) ( 1 4 ) 0 . 8 0 +0.10 -0.05 9.60 0.10 ( r 2 . 7 5 ) 3 8 . 8 0 1.00 1.00 0.10 ( r 1 . 0 0 ) ( 9 0 ) ( 5 ) ( 7 ) 1 2 . 2 0 0.30 1 0 . 4 0 0.30 ( r 1 . 6 5 )
10 www.fairchildsemi.com FP7G150US60 rev. a FP7G150US60 transfer molded type igbt module
11 www.fairchildsemi.com FP7G150US60 rev. a FP7G150US60 transfer molded type igbt module rev. i34 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidianries, and is not intended to be an exhaustive list of all such trademarks. * ezswitch? and flashwriter ? are trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make ch anges without further notice to any products herein to improve reliability, function, or design. fa irchild does not assume any liability arising out of the application or use of any product or circuit descri bed herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically th e warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express writ ten approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonabl y expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failur e to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? ecospark ? efficentmax? ezswitch? * ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motionmax? motion-spm? optologic ? optoplanar ? ? pdp-spm? power-spm? powertrench ? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world 1mw at a time? smartmax? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 supermos? ? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? ultra frfet? unifet? vcx? visualmax? tm ? tm tm datasheet identification product status definition advance information formative or in design this datasheet contains the design s pecifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data; supplementary data will be pub- lished at a later date. fairchild semi conductor reserves the right to make changes at any time withou t notice to improve design. no identification needed full production this datasheet contains fi nal specifications. fairch ild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production this datasheet contains s pecifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only.

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